发明名称 |
Rough oxide hard mask for DT surface area enhancement for DT DRAM |
摘要 |
In a process for making a DT DRAM structure, the improvement of providing a surface area enhanced DT below the collar region and node capacitance that does not shrink with decreasing groundrule/cell size, comprising:a) providing a semiconductor substrate having a collar region and an adjacent region below the collar region, the collar region having SiO deposited thereon;b) depositing a SiN liner on said collar region and on the region below the collar;c) depositing a layer of a-Si on the SiN liner to form a micromask;d) subjecting the structure from step c) to an anneal/oxidation step under a wet environment at a sufficient temperature to form a plurality of oxide dot hardmasks;e) subjecting the SiN liner to an etch selective to SiO;f) subjecting the structure from step e) to a Si transfer etch using a chemical dry etch (CDE) selective to SiO to create rough Si surface;g) stripping SiO and the SiN; and forming a node and collar deposition.
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申请公布号 |
US6559002(B1) |
申请公布日期 |
2003.05.06 |
申请号 |
US20010032041 |
申请日期 |
2001.12.31 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
KUDELKA STEPHAN;TEWS HELMUT HORST;RAHN STEPHEN;MCSTAY IRENE;SCHROEDER UWE |
分类号 |
H01L21/02;H01L21/033;H01L21/308;H01L21/311;H01L21/3213;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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