发明名称 System and method for power saving memory refresh for dynamic random access memory devices after an extended interval
摘要 A delay device is added to the addressing and refreshing circuitry of a DRAM array comprised of DRAM devices less volatile than conventional DRAM devices and, thus, need not be refreshed as often. The delay device is connected to intercept refresh signals generated by a conventional DRAM refresh controller and initiates a refresh cycle after disregarding a predetermined number of refresh signals generated by the refresh controller whose total duration equals the interval by which the less volatile DRAM devices must be refreshed. The delay device also is adapted to power off circuitry needed to address the DRAM devices when the DRAM devices are not being refreshed or otherwise accessed. Additional circuitry is added to selectively power on only specific addressing devices actually needed to address those certain portions of the array being refreshed at that time.
申请公布号 US6560155(B1) 申请公布日期 2003.05.06
申请号 US20010002707 申请日期 2001.10.24
申请人 MICRON TECHNOLOGY, INC. 发明人 HUSH GLEN
分类号 G11C11/406;(IPC1-7):G11C7/00 主分类号 G11C11/406
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