| 摘要 |
A bus switch is protected from undershoots on either of its terminals. The bus switch transistor is an n-channel metal-oxide-semiconductor (MOS) with its source connected to a first bus and its drain connected to a second bus. During isolation, the gate node of the bus switch transistor is discharged to ground by a pulsed transistor, and then kept at ground by a leaker transistor. Sense-pulse circuits are attached to the first and second bus. When a low-going transition is detected by a sense-pulse circuit, an n-channel connecting transistor is turned on, connecting the bus with the low-going transition to the gate node through a grounded-gate n-channel transistor. If an undershoot occurs, it is coupled to the gate node. Since both the gate and source of the bus switch transistor are coupled to the undershoot, the gate-to-source voltage never reaches the transistor threshold and the bus switch transistor remains off. An external direction signal may also be used to pre-activate the connecting transistor for one of the two sides of the bus switch transistor, replacing the sense-pulse circuits.
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