发明名称 |
Phase shift mask and manufacturing the same |
摘要 |
The present invention provides a method of manufacturing halftone phase shift masks in less steps to save time and cost and to increase the yield, and a halftone phase shift mask with higher phase- and size controllability. To achieve this, the halftone phase shift mask includes a structure having a shade band of resist film formed on the halftone film delineating fine patterns and around the area of fine pattern. |
申请公布号 |
US6558855(B2) |
申请公布日期 |
2003.05.06 |
申请号 |
US20010800501 |
申请日期 |
2001.03.08 |
申请人 |
HITACHI, LTD. |
发明人 |
TANAKA TOSHIHIKO;HASEGAWA NORIO |
分类号 |
G03F1/08;G03F1/00;G03F1/14;G03F1/32;G03F1/62;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):G03P9/00 |
主分类号 |
G03F1/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|