发明名称 Phase shift mask and manufacturing the same
摘要 The present invention provides a method of manufacturing halftone phase shift masks in less steps to save time and cost and to increase the yield, and a halftone phase shift mask with higher phase- and size controllability. To achieve this, the halftone phase shift mask includes a structure having a shade band of resist film formed on the halftone film delineating fine patterns and around the area of fine pattern.
申请公布号 US6558855(B2) 申请公布日期 2003.05.06
申请号 US20010800501 申请日期 2001.03.08
申请人 HITACHI, LTD. 发明人 TANAKA TOSHIHIKO;HASEGAWA NORIO
分类号 G03F1/08;G03F1/00;G03F1/14;G03F1/32;G03F1/62;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):G03P9/00 主分类号 G03F1/08
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