| 摘要 |
A substrate processing apparatus has a chamber (108) with a subs trate transport to transport a substrate onto a substrate support (170) in the chamber, a gas supply (42), to provide a gas in th e chamber, a gas energizer (158) to energize the gas, and a gas exhaust to exhaust (152) the gas. A controller (300) operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40. |
