发明名称 |
Sputtering apparatus and film forming method |
摘要 |
The present invention is to provide a sputtering apparatus and a thin film formation method which make it possible to form respective layers of a multilayer film having a clean interface at a optimum temperature, or which make it possible to continuously carry out the film formation and the surface processing. Another object of this invention is to provide a small sputtering apparatus for forming a multilayer film as compared with prior art apparatus. A sputtering apparatus of this invention comprises a main shaft around which at least one target and at least one surface processing mechanism are installed, a substrate holder holding a substrate or a plurality of substrates arranged facing the target and the surface processing mechanism, and a rotation mechanism to rotate the main shaft or the substrate holder.
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申请公布号 |
US2003079984(A1) |
申请公布日期 |
2003.05.01 |
申请号 |
US20020278783 |
申请日期 |
2002.10.24 |
申请人 |
OKATANI KENJI;YAMADA SATOSHI;HASEGAWA YOSHIRO |
发明人 |
OKATANI KENJI;YAMADA SATOSHI;HASEGAWA YOSHIRO |
分类号 |
C23C14/34;C23C14/22;C23C14/35;G11B5/851;H01L21/687;(IPC1-7):C23C14/32 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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