发明名称 Method of processing a semiconductor wafer and preprocessed semiconductor wafer
摘要 A method of processing a semiconductor wafer (10) is provided. The method comprises the steps of: providing a semiconductor wafer (10) as a semiconductor substrate (12), preprocessing the semiconductor wafer (10) by depositing on the semiconductor wafer (10) at least one additional layer (14, 16), and further processing the preprocessed semiconductor wafer (10). The preprocessing is accomplished in a first factory (18) and the further processing is accomplished in a second factory (20). The present invention is further related to a preprocessed semiconductor wafer (10) an to a system for processing a semiconductor wafer (10).
申请公布号 US2003082857(A1) 申请公布日期 2003.05.01
申请号 US20010033071 申请日期 2001.10.26
申请人 STANLEY TIM;MALTABES JOHN;MAUTZ KARL 发明人 STANLEY TIM;MALTABES JOHN;MAUTZ KARL
分类号 H01L21/223;H01L21/336;H01L21/66;(IPC1-7):H01L21/00;H01L21/823;H01L21/824 主分类号 H01L21/223
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