| 摘要 |
In extremely minute copper wiring the width or the thickness of which is equal to or shorter than approximately the double length of the mean free path of a copper atom, a value of the resistance may be larger, compared with aluminum wiring of the same extent and it is difficult to realize wiring having small resistance. To solve such a problem, aluminum wiring is used for wiring having form in which the respective resistivities rho of both wirings have the relation of rhoAl<rhoCu and copper wiring is used for wiring having form in which the respective resistivities rho of both wirings have the relation of rhoAl>=rhoCu. As a result, a semiconductor device which has small resistance, transmits a signal at high speed and is provided with a multilayer wiring layer can be realized.
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