| 发明名称 |
Silicon carbide as a stop layer in chemical mechanical polishing for isolation dielectric |
| 摘要 |
Silicon carbide is used for a hardmask for the isolation dielectric etch and also serves as an etch stop for chemical-mechanical polishing. Alternatively, silicon carbonitride or silicon carboxide can be used.
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| 申请公布号 |
US6555476(B1) |
申请公布日期 |
2003.04.29 |
| 申请号 |
US19980217123 |
申请日期 |
1998.12.21 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
OLSEN LEIF C.;SWANSON LELAND S.;EDWARDS HENRY L. |
| 分类号 |
H01L21/3065;H01L21/3105;H01L21/762;(IPC1-7):H01L21/302;H01L21/304;H01L21/306 |
主分类号 |
H01L21/3065 |
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