发明名称 |
STARTUP CIRCUIT OF BANDGAP REFERENCE VOLTAGE GENERATION CIRCUIT |
摘要 |
PURPOSE: A startup circuit of a bandgap reference voltage generation circuit is provided to perform easily control operations according to signal modes and reduce the power consumption by simplifying a total structure of the startup circuit. CONSTITUTION: A P-type MOSFET(101) includes a source connected with a supply voltage terminal(VDD) and a gate connected with an earth portion. One end of a switch(110) is connected with a drain of the P-type MOSFET(101). The other end of the switch(110) is connected with a drain and a gate of the first N-type MOSFET(102). The switch(110) is turned on or off according to an external enable signal(EN). A current mirror(MR1) is formed with the first N-type MOSFET(102) and the second N-type MOSFET(103). The third N-type MOSFET(104) has a gate and a drain connected with a source of the first N-type MOSFET(102). An output terminal is formed at a drain of the second N-type MOSFET(103).
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申请公布号 |
KR20030032117(A) |
申请公布日期 |
2003.04.26 |
申请号 |
KR20010062346 |
申请日期 |
2001.10.10 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHO, HAN JIN;JUNG, HUI BEOM;KWON, JONG GI |
分类号 |
G05F3/26;(IPC1-7):G05F3/26 |
主分类号 |
G05F3/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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