| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that thermal destruction occurs in a semiconductor device since heat generated by the semiconductor device during operation cannot be efficiently radiated outside. SOLUTION: A substrate 1 composed of silicon carbide in 40 to 65 wt.% and copper in 35 to 60 wt.% and a formation containing lithium silicate glass in 20 to 80 vol.% containing Li2 O3 in 5 to 30 wt.% and having a submission point of 40 to 800 deg.C and a filler component composed of at least one of quartz, cristobalite, tridymite, enstatite and forsterite in 20 to 80 vol.% are formed, and a package for storing the semiconductor device is composed of a frame-like insulator 2 composed of a sinter containing the crystal phase of at least one of quartz, cristobalite, tridymite, enstatite and forsterite and a lid body 3. |
