| 摘要 |
PROBLEM TO BE SOLVED: To suppress an inconvenience that an insulating reactant is stuck to the surface of Cu wiring on a lower layer which is exposed to be base of a wiring groove, that a silicon carbide film and an organic insulating film exposed to the side wall of the wiring groove are side-etched when an interlayer insulating film including the silicon carbide film, and that the organic insulating film is dry-etched and the wiring groove is formed above Cu wiring on the lower layer. SOLUTION: When a laminated film formed of a silicon oxide film 26, an organic insulating film 25, a silicon oxide film 24, an organic insulating film 23 and a silicon carbide film 22 is dry-etched and the wiring groove 30 is formed above Cu wiring 21, the mix gas of SF6 and NH3 is used as the etching gas of the silicon carbide film 22. Thus, the side wall of the wiring groove 30 is vertically worked, and the inconvenience that the sediment and the reactant are stuck to the surface of Cu wiring 21 exposed to the base of the wiring groove 30 is suppressed.
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