发明名称 SEMICONDUCTOR PROCESSING UNIT AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor processing unit in which heat radiation to a semiconductor substrate is reduced by suppressing a temperature rise of a cover disposed in a chamber and reaction products adhering to the cover are removed easily. SOLUTION: Deposition of reaction products on the inner wall face of a chamber 1 is prevented by a cover 10. In order to reduce heat radiation from the cover 10 to a semiconductor substrate 9, semiconductor cooling elements 13 are arranged on the cover 10, and a current is fed in the direction for causing the endothermic reaction of the semiconductor cooling element 13 thus absorbing heat stored in the cover 10. The separation of the reaction products is facilitated by feeding a current in the direction for causing the exothermic reaction of the semiconductor cooling element 13 thereby elevating the temperature of the cover 10.
申请公布号 JP2003124202(A) 申请公布日期 2003.04.25
申请号 JP20020216084 申请日期 2002.07.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 IIDA SATOSHI;MIYATAKE HIROSHI;SATO TETSUO;MARUYAMA TAKAHIRO;KUSUMI YOSHIHIRO;KIMURA HAJIME;TERATANI AKIYOSHI
分类号 H05H1/46;H01L21/3065 主分类号 H05H1/46
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