| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment system which is capable of removing impurities of the order of molecules deposited on a substrate. SOLUTION: A substrate treatment system is equipped with a heating plate 32 which heats a wafer W coated with resist in a hermetically closed treatment chamber R, a vacuum pump 26 which depressurizes the treatment chamber R, and a control means which controls a heating temperature and the internal pressure of the treatment chamber R so as to remove impurities deposited on the resist. Therefore, impurities of the order of molecules such as oxygen, ozone or moisture deposited on the surface of resin applied on the wafer can be removed by an interaction between an evaporating action caused by heating and a sucking action caused by depressurization. |
