| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an easy-to-shortcircuit capacitive fusion switch which can be employed in a semiconductor integrated circuit device in order to reduce current consumption by eliminating a through current flowing between Vcc and GND. SOLUTION: The capacitive fusion switch comprises a first conductive pattern 10a and a second conductive pattern 10b formed on a semiconductor substrate, and a dielectric film 11 arranged between the first and second conductive patterns wherein the first and second conductive patterns are brought into conductive state when the first conductive pattern is irradiated with a laser beam.</p> |
