METHOD FOR DEPOSITING SiC:H FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing an SiC:H film having a low dielectric constant and desirable characteristics. SOLUTION: The method for manufacturing a semiconductor device comprises a step (a) for forming a semiconductor element on a semiconductor substrate, a step (b) for depositing an SiC:H film by repeating growth and stopping growth two times or more under a low pressure atmosphere, and a step (c) for forming an insulating cap layer on the SiC film or the SiC:H film.