| 摘要 |
<p>There is provided a zinc oxide semiconductor device having a hole concentration higher than 1019/cm3 produced by dual-doping a group III element and a group V element, Ga and As, into a zinc oxide thin film so that Madelung energy is reduced by the introduction of an n-type dopant, a group III element, and the incorporation with a p-type dopant, a group V element is made easy to enhance the local energy level of As inside a band gap.</p> |
