发明名称 Process for selecting faulty dielectrics of a semiconductor component comprises forming a testing layer during production of component above the dielectrics, testing functionality of the dielectrics, and removing or structuring
摘要 Process for selecting faulty dielectrics (2) of semiconductor component (1) comprises: forming a testing layer (3) during production of the component above dielectrics; simultaneously testing functionality of the dielectrics by applying electrical voltage on testing layer above and on substrate (4) below dielectrics; and removing or structuring testing layer to continue to production of component. Preferred Features: The testing layer is produced by intermediate structuring of the material layers already produced by the production process. The testing layer is made from polysilicon or polysilicon-germanium.
申请公布号 DE10149773(A1) 申请公布日期 2003.04.24
申请号 DE2001149773 申请日期 2001.10.09
申请人 ROBERT BOSCH GMBH 发明人 LOTTHOLZ, STEFAN
分类号 H01L23/544;(IPC1-7):H01L21/66;H01L21/336 主分类号 H01L23/544
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