发明名称 |
Process for selecting faulty dielectrics of a semiconductor component comprises forming a testing layer during production of component above the dielectrics, testing functionality of the dielectrics, and removing or structuring |
摘要 |
Process for selecting faulty dielectrics (2) of semiconductor component (1) comprises: forming a testing layer (3) during production of the component above dielectrics; simultaneously testing functionality of the dielectrics by applying electrical voltage on testing layer above and on substrate (4) below dielectrics; and removing or structuring testing layer to continue to production of component. Preferred Features: The testing layer is produced by intermediate structuring of the material layers already produced by the production process. The testing layer is made from polysilicon or polysilicon-germanium. |
申请公布号 |
DE10149773(A1) |
申请公布日期 |
2003.04.24 |
申请号 |
DE2001149773 |
申请日期 |
2001.10.09 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
LOTTHOLZ, STEFAN |
分类号 |
H01L23/544;(IPC1-7):H01L21/66;H01L21/336 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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