发明名称 Semiconductor integrated circuit device e.g. double data rate SRAM has delay lock loop circuit with phase detector detecting phase difference of outputs of two buffers to change output tap of delay circuits
摘要 A multiplexer (35A) outputs signal with rising edge and falling edges based on the output of delay circuits (21,22,31,32). A delay lock loop (DLL) circuit (3) has phase detector (33) detecting phase difference of outputs of input buffer and buffer (38). A counter (34) outputs a signal to change output tap of the circuits (31,32) based on detector output. An Independent claim is also included for delay lock loop apparatus.
申请公布号 DE10244123(A1) 申请公布日期 2003.04.24
申请号 DE2002144123 申请日期 2002.09.18
申请人 ELPIDA MEMORY, INC. 发明人 TAKAI, YASUHIRO
分类号 G11C11/407;G06F1/10;G11C7/22;G11C11/4076;H03K5/00;H03K5/13;H03L7/08;H03L7/081;(IPC1-7):G11C11/407 主分类号 G11C11/407
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