Luminescent diode has a trench contact formed from the rear side of a thin film structure and electrically contacting a first semiconductor layer

摘要

Luminescent diode has a trench contact (8) formed from the rear side of a thin film structure and electrically contacting a first semiconductor layer (2). The contact is electrically isolated from a second semiconductor layer (3) by a first passivating layer (6). An Independent claim is also included for a process for the production of a luminescent diode. Preferred Features: The contact electrically isolated from a rear side contact (11) by a second passivating layer (9). The contact is in the form of parallel strips, a lattice or a honeycomb structure. The rear side contact is formed as a mirror for radiation produced in an active zone (4). The first semiconductor layer is made from an n-conducting III-V semiconductor and the second semiconductor layer from a p-conducting III-V semiconductor or vice versa.