发明名称 |
Interconnect structure with a cap layer on an IMD layer and a method of formation thereof |
摘要 |
An interconnect structure comprises a first level metal wiring line patterned on a semiconductor substrate, an inter-metal dielectric (IMD) layer formed on the metal wiring line, a contact plug passing through the IMD layer and electrically connected to the top of the first level metal wiring line, and a second level metal wiring line patterned on the IMD layer and electrically connected to the top of the contact plug. A cap layer is sandwiched between the top of the IMD layer and the bottom of the second level metal wiring line.
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申请公布号 |
US2003075807(A1) |
申请公布日期 |
2003.04.24 |
申请号 |
US20020153808 |
申请日期 |
2002.05.24 |
申请人 |
HSUE CHEN-CHIU;LEE SHYH-DAR;TSAI JEN-HANN |
发明人 |
HSUE CHEN-CHIU;LEE SHYH-DAR;TSAI JEN-HANN |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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