发明名称 |
Memory cell, wafer, semiconductor component with memory cell and a method for fabricating an insulating collar for a memory |
摘要 |
The invention relates to a DRAM memory cell having a trench filled with conductive material connected to a selection transistor by a connection having a vertical insulation collar arranged perpendicularly to a layer sequence of the memory cell. The vertical insulation collar is connected to a lateral insulation collar of the trench. This lateral insulation collar essentially extends perpendicular to the vertical insulation collar or is arranged laterally with respect to the vertical insulation collar. It is thus possible to provide a memory cell, a wafer and a semiconductor component that have a high integration density and a sufficient dielectric strength, and that efficiently suppress parasitic transistors. A method for fabricating a lateral insulating collar for a memory cell is also described.
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申请公布号 |
US2003077873(A1) |
申请公布日期 |
2003.04.24 |
申请号 |
US20020277387 |
申请日期 |
2002.10.22 |
申请人 |
HIERLEMANN MATTHIAS;STRASSER RUDOLF |
发明人 |
HIERLEMANN MATTHIAS;STRASSER RUDOLF |
分类号 |
H01L21/334;H01L21/8242;H01L27/108;H01L29/76;H01L29/94;H01L31/119;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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