METHOD FOR ANALYZING STRUCTURE OF SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for analyzing the structure of semiconductor single crystals capable of easily obtaining information on the layer thickness of each semiconductor layer and information on each lattice constant in the semiconductor single crystals with multiple quantum well layers formed by alternately laminating first semiconductor layers and second semiconductor layers. SOLUTION: In the semiconductor single crystals with the multiple quantum well layers formed by alternately laminating the first semiconductor layers with composition different of that of a substrate and the second semiconductor layers with composition different from that of the substrate and that of the first semiconductor layers, two semiconductor single crystals or more are prepared by altering the growth time of at least either the first semiconductor layers or the second semiconductor layers. The prepared two semiconductor single crystals or more are measured by X-ray diffraction. On the basis of the results of the measurement by the X-ray diffraction, the information on the layer thickness of the first semiconductor layers and the second semiconductor layers and the information on their lattice constants are computed.