| 摘要 |
PROBLEM TO BE SOLVED: To provide a high quality SiC single crystal almost free from micropipe defects, screw dislocations, edge dislocations, and stacking faults, and to provide a method of producing the same, an SiC seed crystal and a method of producing the same. SOLUTION: In a first growth process, a first growth crystal is produced by using a surface having an offset angle within±20 deg. from 1-100} plane or a surface having an offset angle within±20 deg. from 11-20} plane as a first growth surface. In an intermediate growth process, n-th growth crystal is produced by using a surface inclined from the (n-1)th growth surface at an angle of 45 to 90 deg. and inclined from the 0001} plane at an angle of 60 to 90 deg. as the n-th growth surface. Further, in the final growth process, a bulk SiC single crystal 30 is grown on the final growth surface 35 by using a surface having an offset angle within±20 deg. from the 0001} plane of the (N-1)th growth crystal as the final growth surface 35.
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