| 摘要 |
<p>PROBLEM TO BE SOLVED: To diminish a halo component of a light shielding film which lowers the processing quality of a modified void defective part and to enable high-grade modification of a void defective part smaller than a minimum processing size determined by a beam diameter. SOLUTION: By making use of the selectivity that an FIB-CVD film 25 using naphthalene or the like as a starting material does not grow in a region 26 of a glass substrate in which Ga ions have been implanted in large quantities, the periphery 22 of a region on which a light shielding film is deposited is irradiated with Ga ion beams 2 before depositing the light shielding film to define the deposition region 21 so that the light shielding film grows only in the required region. After depositing the light shielding film, the Ga ion implanted glass region 26 having a lowered transmittance is removed by alkali cleaning or such gas assisted etching as not to lower the transmittance of the glass to ensure the transmissivity necessary for exposure.</p> |
