| 摘要 |
A method of fabricating a semiconductor device is provided in which a protective tape for back grinding is adhered to a front surface of a wafer and back grinding processing is carried out. Thereafter, with the protective tape for back grinding adhered to the wafer, a tape-shaped adhesive for dice bonding is adhered to a reverse surface of the wafer. Thereafter, the protective tape for back grinding is peeled off, probing is carried out, and a protective tape for dicing is adhered to the tape-shaped adhesive for dice bonding. After dicing, semiconductor elements, to which the tape-shaped adhesive for dice bonding is adhered, are picked up by a pick up tool. Dice bonding is carried out by using the tape-shaped adhesive for dice bonding. In this way, even if the wafer is made thin, the wafer doesn't break during the fabricating process and costs don't increase.
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