发明名称 |
Methods for etching tungsten stack structures |
摘要 |
The invention encompasses methods for etching and/or over-etching tungsten stack structures, especially tungsten-polysilicon stack structures. The etching methods of the invention preferably employ a Cl2/NF3 etchant, optionally including O2 and/or helium. The over-etching methods of the invention preferably use a NF3/N2/O2 etchant. The methods of the invention enable effective etching of tungsten-polysilicon stacks where topographic variation is present across the substrate and/or where other tungsten stacks of different structure are also being etched.
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申请公布号 |
US6551942(B2) |
申请公布日期 |
2003.04.22 |
申请号 |
US20010882147 |
申请日期 |
2001.06.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NAEEM MUNIR D. |
分类号 |
H01L21/3213;H01L21/8242;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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