发明名称 Diode circuit with ideal diode characteristic
摘要 A circuit configuration produces an at least approximately ideal diode characteristic on the basis of a diode. A power MOSFET has a control path connected in parallel with the diode, a load path forming connection terminals of the ideal diode, and a gate connection to which a predetermined voltage potential is applied, for turning on the power MOSFET in the forward-bias direction of the diode and turning off the power MOSFET in the reverse-bias direction.
申请公布号 US6552599(B1) 申请公布日期 2003.04.22
申请号 US19990248448 申请日期 1999.02.11
申请人 INFINEON TECHNOLOGIES AG 发明人 XU CHIHAO
分类号 G05F3/16;H02M3/158;H03K17/06;H03K17/30;(IPC1-7):H03K17/74 主分类号 G05F3/16
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