| 摘要 |
A lateral PNP is disclosed in which a substrate of a first conductivity type is used. On top of the substrate a buried region of a second conductivity type is formed. A lightly doped collector region is located above the buried region. The lateral PNP also includes a base region of a second conductivity type formed by a graded channel implant and a well region of a second conductivity type, the well region contacting the base region, the buried region and a base contact. Additionally, there are collector contacts and emitter contacts of a first conductivity type. The lightly doped collector region results in a large Early voltage and the base region provides for a high current gain.
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