发明名称 |
Dual width contact for charge gain reduction |
摘要 |
A method of forming a contact in an integrated circuit is disclosed herein. The method includes providing a first insulating layer over a semiconductor substrate including first and second gate structures, providing an etch stop layer over the first insulating layer, providing a second insulating layer over the etch stop layer, creating a first aperture in the second insulating layer between the first and second gate structures, creating a second aperture in the first insulating layer below the first aperture, and filling the first and second apertures with a conductive material to form the contact. The first aperture has a first aperture width and extends to the etch stop layer. The second aperture has a second aperture width which is less than the first aperture width.
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申请公布号 |
US6551923(B1) |
申请公布日期 |
2003.04.22 |
申请号 |
US19990430845 |
申请日期 |
1999.11.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SHIELDS JEFFREY A.;RANGARAJAN BHARATH |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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