| 摘要 |
A semiconductor device comprises a first conductivity type semiconductor substrate, a first conductivity type semiconductor layer formed on the substrate, a MISFET formed in a first area of the semiconductor layer, having a drain and source, and a gate electrode formed on a semiconductor layer between the drain and source through a gate insulator, an internal source electrode formed to contact the source and whose surface is covered with an insulating layer, a diode formed in a second area of the semiconductor layer, having a cathode and an anode provided on the cathode, an anode electrode which contacts the anode, a conductive portion piercing the semiconductor layer to electrically connect the internal source electrode and the cathode to the substrate, and a source/cathode electrode formed on the back plane of the substrate and commonly provided as a source electrode of the MISFET and a cathode electrode of the diode.
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