发明名称 |
DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER |
摘要 |
PURPOSE: A distributed feedback semiconductor laser is provided to maximize the differential gain by integrating a laser oscillator and a laser amplifier having no the variation in carrier density on a single semiconductor substrate and controlling the carrier density to be minimum. CONSTITUTION: The distributed feedback semiconductor laser comprises a semiconductor substrate(310), first and second clad layers(320,380) having a predetermined refractive index, a guide layer(350) disposed between the first and second clad layers(320,380) to waveguide light to the inside thereof. The distributed feedback semiconductor laser includes a laser oscillator(450) and a laser amplifier(460). The laser oscillator(450) comprises an oscillator active layer(360) and the first grating(330) forming the lower surface of the guide layer(350). The laser amplifier(460) comprises an amplifier active layer(370) and the second grating(340) forming the lower end of the guide layer(350).
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申请公布号 |
KR20030031204(A) |
申请公布日期 |
2003.04.21 |
申请号 |
KR20010062881 |
申请日期 |
2001.10.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BANG, DONG SU;JANG, DONG HUN;SIM, JONG IN |
分类号 |
H01S5/12;H01S5/026;H01S5/0625;H01S5/20;H01S5/50;(IPC1-7):H01S5/18 |
主分类号 |
H01S5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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