METHOD OF CLEANING CONTACT REGION OF METALLIC WIRE

摘要

PURPOSE: A method of cleaning a contact region of a metallic wire is provided to prevent the low permittivity interlayer dielectric from being deteriorated by forming a nitride film barrier at the sidewall of the interlayer dielectric within the contact region. CONSTITUTION: A metallic wire(22) and an interlayer dielectric(24) are sequentially formed on a substrate(21). The interlayer dielectric(24) is selectively removed to thereby form a contact region. A nitrogen-based radical is soaked into the contact region to thereby form a nitride film barrier(28) at the sidewall of the interlayer dielectric(24). Argon ions are sputtered into the contact region to thereby remove the surface residue on the metallic wire(22). The contact region suffers reactive cleaning such that the metallic oxide film on the exposed portion of the metallic wire(22) is removed. A plasma surface treatment is made with respect to the contact region using a nitrogen-based radical to thereby remove the reaction by-products attached to the sidewall of the interlayer dielectric(22).