| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a ceramic substrate for semiconductor production and an inspection equipment which can satisfy various characteristics required for respective parts of the inside of the ceramic substrate such as sintering property, concealing property, thermal conductivity, volume resistivity, or the like, and which can fully demonstrate a demanded function as a wafer probe, an electrostatic chuck, etc. SOLUTION: The ceramic substrate for the semiconductor production and the inspection equipment is a substrate for disposing a semiconductor wafer in contact with the substrate, or heating in the state of being held by keeping a fixed space in the interval. The ceramic substrate is constituted so as to contain carbon, so as to have electrodes as an electric conductor inside of the substrate, and simultaneously so as to form resistance heating elements in the inside or on the bottom face of the substrate beneath the electrodes. The ceramic substrate is characterized in that carbon concentration in a ceramic layer between the electrodes and/or on the electrodes is higher than the carbon concentration in a ceramic layer beneath the electrodes.</p> |
