| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic memory device having a MTJ memory cell of which a magnetization characteristic is simple and operation margin can be secured without complexing a manufacturing process. SOLUTION: In a tunnel magnetic resistance element 100a, free magnetizing layers 103 and 104 have magnetizing directions in accordance with stored data. The free magnetizing layers 103 and 104 are arranged so as to hold an intermediate layer 107 formed by non-magnetic conductors between them. At the time of write data, a data write current having a direction in accordance with a level of the stored data to be written is made to flow in the intermediate layer 107. The free magnetizing layers 103 and 104 are magnetized in a loop state by a magnetic field generated by a current flowing in the intermediate layer.
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