发明名称 HIGH PURITY ZIRCONIUM OR HAFNIUM, SPUTTERING TARGET COMPRISING THE HIGH PURITY ZIRCONIUM OR HAFNIUM AND THIN FILM FORMED USING THE TARGET, AND METHOD FOR PRODUCING HIGH PURITY ZIRCONIUM OR HAFNIUM AND METHOD FOR PRODUCING POWDER OF HIGH PURITY ZIRCONIUM OR HAFNIUM
摘要 <p>The present invention relates to high-purity zirconium or hafnium, a sputtering target composed of said high-purity zirconium or hafnium, and a thin film formed with the target. The present invention also includes a manufacturing method for obtaining high-purity zirconium or hafnium metal by electron beam melting of surface cleaned Zr or Hf sponge, and furthermore a method of obtaining high-purity Zr or Hf powder from a cast (EB melted) ingot by cutting and hydrogenating.</p>
申请公布号 KR20030031199(A) 申请公布日期 2003.04.18
申请号 KR20037004600 申请日期 2003.03.31
申请人 发明人
分类号 C22B34/14;B22F9/02;C22B9/22;C22C1/04;C22C16/00;C22C27/00;C23C14/34;H01L21/28;H01L23/532;H01L29/51 主分类号 C22B34/14
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