| 摘要 |
PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) is provided to improve electrical properties by controlling a polysilicon thickness of a source/drain region and a channel region. CONSTITUTION: An active layer(61) with different thickness is formed on a substrate(60). A gate insulating layer(62a) and a gate electrode(63a) are sequentially formed on the active layer with the thin thickness. By implanting dopants, a channel and an LDD region are formed in the thin active layer, and a source/drain region is formed simultaneously in the thick active layer. An interlayer dielectric(65) is formed on the resultant structure. A contact hole is formed by selectively etching the interlayer dielectric. A source/drain electrode(66) is formed in the contact hole.
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