SEMICONDUCTOR EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a novel semiconductor epitaxial wafer with which the occurrence of the warpage an crack of the wafer can be effectively suppressed and a method for manufacturing the same. SOLUTION: The semiconductor epitaxial wafer 1 which is grown with a crystalline layer 3 having a lattice constant and coefficient of thermal expansion on the front surface of a substrate 2 by a vapor phase growth method of an organic metal is provided with a stress offsetting layer 4 for imparting a tensile stress to the substrate 2 on the rear surface side of the substrate 2. Consequently, the tensile stress generated in the crystalline layer 3 from the rear surface side of the substrate 2 is offset and therefore the trouble, such as the warpage of the substrate after cooling and the crack by the warpage can be effectively suppressed.