SINGLE CRYSTALLINE SILICON WAFER WITH GETTERING UNIT AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A single crystalline silicon wafer with a getterring unit and a method for fabricating the same are provided to make the gettering by forming a crystal originated defect-free region at the surface of the wafer while leaving the micro-damage at the rear of the wafer. CONSTITUTION: A silicon ingot is cut thinly. Both sides of the cut silicon wafer are ground, and cleaned. The silicon wafer is heat-treated at a high temperature to form a crystal originated defect-free region at the surface thereof. Both the sides of the silicon wafer are polished such that the minute crystal originated particles made at the grinding are entirely removed from the one side thereof, and those particles are partially removed from the other side thereof. The silicon wafer is then cleaned.