SINGLE CRYSTALLINE SILICON WAFER WITH GETTERRING UNIT AND METHOD OF FABRICATING SAME

摘要

PURPOSE: A single crystalline silicon wafer with a getterring unit and a method of fabricating the same are provided to improve the device reliability by forming a gettering site for gettering the unnecessary impurities within the wafer as well as at the rear of the wafer. CONSTITUTION: A silicon ingot is cut thinly. The both sides of the cut silicon wafer are ground, and cleaned. The silicon wafer is heat-treated to form a bulk micro defect(BMD) core being the gettering site for gettering the metallic impurities during the device formation process. The both sides of the silicon wafer are polished such that the minute crystal originated particles made at the grinding are entirely removed from the one side thereof, and those particles are partially removed from the other side thereof. The silicon wafer is then cleaned.