发明名称 Decoupling capacitor for high frequency noise immunity
摘要 Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the substrate, and a top plate layer disposed on the high K dielectric layer. According to one embodiment, the high K dielectric layer includes Al2O3. According to other embodiments, the nano crystals include gold nano crystals and gold nano crystals. One capacitor embodiment includes a MIS (metal-insulator-silicon) capacitor fabricated on silicon substrate, and another capacitor embodiment includes a MIM (metal-insulator-metal) capacitor fabricated between the interconnect layers above silicon substrate. The structure of the capacitor is useful for reducing a resonance impedance and a resonance frequency for an integrated circuit chip. Other aspects are provided herein.
申请公布号 US2003072126(A1) 申请公布日期 2003.04.17
申请号 US20010944986 申请日期 2001.08.30
申请人 发明人 BHATTACHARYYA ARUP
分类号 H01L21/02;H01L21/28;H01L21/3115;H01L21/314;H01L21/316;H01L29/51;H01L29/94;(IPC1-7):H01G4/228 主分类号 H01L21/02
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