发明名称 |
Semiconductor device, method of manufacturing semiconductor device, and system for evaluating electrical characteristics of semiconductor device |
摘要 |
A method of manufacturing a semiconductor device, comprises: forming a semiconductor element in a semiconductor active region, and calculating the generation rate of electron hole pairs generated due to impact ionization caused in the semiconductor element; calculating a volume integral of the generation rate at least in an area where the impact ionization is caused; evaluating time-dependent degradations of electrical characteristics of the semiconductor element on the basis of the volume integral; and manufacturing a semiconductor device on the basis of the evaluation.
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申请公布号 |
US2003073256(A1) |
申请公布日期 |
2003.04.17 |
申请号 |
US20010001977 |
申请日期 |
2001.12.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANIMOTO HIROYOSHI;ENDA TOSHIYUKI |
分类号 |
G01R31/26;H01L21/66;H01L29/786;(IPC1-7):H01L21/66 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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