| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
The present invention relates to a semiconductor device with quantum dots and a method of manufacturing the same, and a structure of the semiconductor device which can control an emission wavelength of the quantum dots and a method of manufacturing the same are provided. The semiconductor device comprises a compound semiconductor substrate containing at least three elements, and quantum dots which are formed on the compound semiconductor substrate and whose emission wavelength is adjusted by the lattice constant of the compound semiconductor substrate.
|
| 申请公布号 |
US2003073258(A1) |
申请公布日期 |
2003.04.17 |
| 申请号 |
US20020285448 |
申请日期 |
2002.11.01 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
MUKAI KOHKI;ISHIKAWA HIROSHI |
| 分类号 |
H01L21/20;H01L29/12;H01L33/06;H01L33/30;H01S5/10;H01S5/22;H01S5/223;H01S5/34;H01S5/40;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
