Halbleiterspeicher-Bauelement, insbesondere ein SRAM, und Verfahren zu seiner Herstellung,申请号DE19991052742-传众专利搜索

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发明名称	Halbleiterspeicher-Bauelement, insbesondere ein SRAM, und Verfahren zu seiner Herstellung
摘要
申请公布号	DE19952742(C2)	申请公布日期	2003.04.17
申请号	DE19991052742	申请日期	1999.11.02
申请人	SEIKO EPSON CORP., TOKIO/TOKYO	发明人	KARASAWA, JUNICHI;WATANABE, KUNIO;KUMAGAI, TAKASHI
分类号	H01L27/088;H01L21/265;H01L21/316;H01L21/8234;H01L21/8238;H01L21/8244;H01L27/092;H01L27/11;(IPC1-7):H01L27/11;H01L21/824;H01L21/762	主分类号	H01L27/088
代理机构		代理人
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