发明名称 SEMICONDUCTOR ELEMENT COMPRISING A SEQUENCE OF LAYERS FOR CONVERTING ACOUSTIC OR THERMAL SIGNALS AND ELECTRICAL VOLTAGE CHANGES INTO EACH OTHER AND METHOD FOR PRODUCING THE SAME
摘要 A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode, an upper electrode and a layer which is arranged between them and is piezoelectrical or pyroelectrical. An auxiliary layer is arranged between the lower electrode and the layer and is used for homogeneously oriented growth of the layer during the production process. The auxiliary layer preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.
申请公布号 EP1301948(A2) 申请公布日期 2003.04.16
申请号 EP20010962822 申请日期 2001.07.03
申请人 INFINEON TECHNOLOGIES AG 发明人 AIGNER, ROBERT;ELBRECHT, LUEDER;HERZOG, THOMAS, RAINER;MARKSTEINER, STEPHAN;NESSLER, WINFRIED
分类号 H01L21/28;H01L37/02;H01L41/08;H01L41/09;H01L41/22;H03H3/02;H03H9/17;(IPC1-7):H01L37/02 主分类号 H01L21/28
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