| 摘要 |
A method for reducing hole defects in the polysilicon layer. The method at least includes the following steps. First of all, a semiconductor substrate is provided, a polysilicon layer is formed over the semiconductor substrate. Then, no hole defects bottom anti-reflective coating process is performed, wherein the no hole defect bottom anti-reflective coating process is selected from the group consisting of dehydration baking, hydrophobic solvent treatment, and steady baking. Finally, a bottom anti-reflective coating is formed over the polysilicon layer.
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