| 摘要 |
A method for forming a line of a semiconductor device is provided, which improves the life span of the line and its reliability by improving resistance to electromigration (EM). The method for forming a line of a semiconductor device includes forming a first insulating film on a semiconductor substrate in which a lower line is formed; depositing an adhesive layer on the first insulating film; forming an upper line metal film on the adhesive layer to be connected with the lower line through a plug that passes through the first insulating film; depositing an ARC film on the upper line metal film; forming a barrier film on the upper line metal film by barrier ion implantation using a mask which exposes a predetermined region of the ARC film; selectively removing the ARC film, the upper line metal film, and the adhesive layer by photolithography and etching processes to form a plurality of trenches, so that an upper line is formed with the upper line metal film; and forming a second insulating film on an entire surface including the trenches.
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