| 发明名称 |
ATOMARE DRÄHTE VON GROSSER LÄNGE UND STABILITÄT UND VERFAHREN ZUM HERSTELLEN DIESER DRÄHTE |
| 摘要 |
Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics. |
| 申请公布号 |
AT235743(T) |
申请公布日期 |
2003.04.15 |
| 申请号 |
AT19970951334T |
申请日期 |
1997.12.15 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE |
发明人 |
DUJARDIN, GERALD;MAYNE, ANDREW;SEMOND, FABRICE;SOUKIASSIAN, PATRICK |
| 分类号 |
H01L21/20;C30B29/60;C30B33/00;H01L21/02;H01L21/04;H01L21/28;H01L29/15;H01L29/161 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
