| 摘要 |
PROBLEM TO BE SOLVED: To form a fine pattern shape in a work material precisely at a low cost by etching. SOLUTION: When a prescribed pattern is formed in a work material such as an interlaminar film 12 in manufacturing a semiconductor device, at first photoresist 13 is applied on the work material and subjected to exposure and development, and a resist film having a prescribed pattern is formed on the work material. Thereafter, the work material is etched to a predetermined depth by using a resist film as a mask. After the resist film is removed, the work material is further etched and the prescribed pattern is formed in the work material. In the process, an etching stopper film is formed in the predetermined depth. After etching is carried out until an etching stopper film is attained, photoresist is removed. A reflection preventive layer is used as an etching stopper film. |
