| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM in which can apply a high stress to a specific transistor. SOLUTION: This device is provided with a power source switching circuit 140 supplying a power source potential Vcc to a word line selecting circuit 130 when a test signal is activated. A potential of a main word line ZMWL0 is made a H level being equal to the power source potential Vcc at the time of non-selection of a word line WL0. Therefore, when a sub-decode-signalϕ0 is made a H level being equal to boosting potential Vpp, not only a transistor 1502 but also a transistor 1501 is turned on, a leak current I1k passing through a word line driver 150 is made to flow, and high stress is applied to the transistor 1501.
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